complogo

Hot Stock: MRF8S21100HSR3

The MRF8S21100HSR3 from NXP Semiconductors is a high-power, RF power LDMOS transistor engineered for W-CDMA and LTE base station applications operating in the 2110 to 2170 MHz frequency band. 


Designed to support Class AB and Class C operation, this device is a standout for high-efficiency RF amplification in modern wireless infrastructure. Offering up to 100 watts CW output power, 33% drain efficiency, and internally matched input/output circuitry, the MRF8S21100HSR3 is an ideal building block for 4G base stations, repeaters, and RF transmitters. Read on to discover more reasons why this RF power MOSFET is a top-tier solution. 

 

Key Features 

100 W CW Output Power at 1 dB Compression Point 

This RF transistor delivers a typical P1dB of 100 watts, making it well-suited for high-performance LTE and W-CDMA amplifiers. 

 

High Efficiency and Gain 

With 33.4% drain efficiency and up to 18.3 dB power gain, the MRF8S21100HSR3 ensures optimal energy usage and strong signal amplification. 

 

W-CDMA and LTE-Ready 

The MRF8S21100HSR3 is optimised for single-carrier W-CDMA signals (3.84 MHz bandwidth, 7.5 dB PAR) with exceptional linearity and an adjacent channel power ratio (ACPR) of –37.2 dBc. 

 

VSWR Tolerance 

Tested to withstand a 10:1 VSWR mismatch at 138 W CW, the MRF8S21100HSR3 is built for rugged environments and high performance under load variations. 

 

Thermally Efficient 

T his transistor stays cool under pressure with a junction-to-case thermal resistance of 0.45 °C/W and supports stable operation up to 225°C junction temperature. 

 

Integrated ESD Protection 

Electrostatic discharge (ESD) protection adds a layer of durability during handling and assembly. 

 

Applications 

The MRF8S21100HSR3 is tailored for use in high-power RF systems requiring efficient signal transmission and robust handling of signal peaks. Key applications include: 

  • 4G LTE base stations 

  • W-CDMA systems 

  • RF power amplifiers 

  • Digital Predistortion (DPD) systems 

  • Doherty amplifiers 

 

Why Choose Component Sense? 

The MRF8S21100HSR3, manufactured by NXP Semiconductors, is trusted for its reliability and efficiency in demanding RF amplifier applications. At Component Sense, we specialise in the fast, reliable, and environmentally responsible supply of in-demand components like the MRF8S21100HSR3. Here is why engineers and procurement professionals rely on us: 

  • Our platform offers real-time access to over 150,000 fully traceable electronic components. We simplify the sourcing process, helping you locate parts quickly and keep your bill of materials (BOM) on track. Discover our full inventory here. 

  • We take supply chain security seriously. Every component we ship is brand-new, unused, and fully traceable to the original manufacturer.  We work exclusively with tier-one OEM and EMS partners, ensuring quality from origin to delivery.  

  • Our industry-leading inspection process, developed in partnership with leading Scottish universities, guarantee every part is 100% counterfeit-free. We back every purchase with a 12-month warranty for added assurance. 

  • We specialise in untouched excess and obsolete (E&O) stock, extending the lifecycle of high-quality components and reducing electronic waste. To further our sustainability goals, we plant two trees for every order, contributing to carbon offsetting for both our buyer and seller and global reforestation. 

  • With over 23 years of experience in the electronics distribution industry, we offer expert support, rapid response, and dependable service. Most quote requests are answered within 20 minutes, and we offer same-day international shipping on most in-stock parts.  Our 95% on-time delivery rate helps you keep your supply chain moving and projects on schedule.  

 

When sourcing electronic parts like the MRF8S21100HSR3, trust Component Sense for authenticity, sustainable procurement, and industry-leading service. Click below to order the MRF8S21100HSR3 and experience our world-class service.