The BUK9207-30B,118 from NXP Semiconductors is a high-efficiency logic-level N-channel TrenchMOS FET, designed for automotive and industrial power switching. Built to the AEC-Q101 automotive qualification standard, it delivers excellent thermal performance, low losses, and high current handling in a compact DPAK (SOT-428) package.
This device combines low on-resistance (as low as 4.4 mΩ) with a 30 V drain-source voltage and continuous drain current up to 75 A, making it ideal for 12 V automotive systems, motor drivers, and power control applications. Its 185 °C junction temperature rating ensures long-term reliability under harsh operating conditions.
Let’s take a closer look at what makes the BUK9207-30B,118 a robust choice for modern automotive power designs.
Logic-Level Drive
Designed for direct interfacing with 5 V gate-drive logic, simplifying control circuit design.
Low On-State Resistance
Ultra-low RDS(on) of 4.4 mΩ (typ.) at 10 V gate drive minimises conduction losses and heat generation.
High Current Capability
Supports up to 75 A continuous drain current and 449 A pulsed, ideal for demanding power switching tasks.
Wide Temperature Range
Operates reliably from –55 °C to +185 °C, suitable for extreme automotive environments.
High Avalanche Energy Rating
Withstands 329 mJ of non-repetitive avalanche energy, providing superior ruggedness during switching transients.
Fast Switching Performance
Turn-on delay of 19 ns and turn-off delay of 100 ns for rapid and efficient switching cycles.
Compact DPAK Package (SOT-428)
Optimised thermal design with 0.95 K/W junction-to-mounting base resistance for efficient heat dissipation.
Automotive Qualified (AEC-Q101)
Tested to meet stringent automotive reliability standards for consistent long-term performance.
The BUK9207-30B,118 is suitable for a wide range of 12 V power management systems, including:
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